All stock codes associated to this product
MZV5P512, MZ-V5P512, 06SS3M2280V5P512BW, 06SS3-M2280-V5P512BW, MZV5P512BW, MZ-V5P512BW, 8806086777575
MZ-V5P512BW
Storage: 512GB
- Samsung V-NAND Technology
- NVMe Read/Write Performance
- Efficient Power Management
- M.2 2280 Form Factor
About This Product
The Samsung 950 PRO NVMe SSD delivers uncompromising power and performance. Now, equipped with the enhanced bandwidth of the NVMe interface, the 950 PRO is ideal for intensive workloads while remaining extremely energy efficient at peak workloads. Presented in a compact M.2 form factor, the 950 PRO is the perfect solution for consumers or professionals looking for the ultimate in SSD performance and reliability.
Maximize endurance under heavy workloads
The innovative V-NAND technology in the 950 PRO increases endurance and prolongs the lifespan with insulators that cause less stress and are more resistant to wear under heavy client workloads when compared to Planar NAND over a 5-year period.* The 950 PRO also features Dynamic Thermal Throttling Protection technology, which controls the temperature of the device to reduce overheating and maintain a high level of sustained performance.
5 years or TBW (256 GB: 200 TB, 512 GB: 400 TB), whichever comes faster
Save power while maintaining peak performanceThe 950 PRO is up to 1.5 times* more power efficient, so your battery will last longer and maintain superior performance levels over a longer period to time compared to SATA SSD.
Based on internal 10GB file power consumption tests using a 512GB capacity 850 PRO and 950 PRO. Results may vary based on the user environment
Experience a next-generation SSD todayEquipped with the enhanced bandwidth of the NVMe interface, the 950 PRO is ideal for intensive workloads, such as computer-aided design, data analysis and engineering simulations. It outperforms SATA SSDs by over 4.5 times in sequential read and by over 2.5 times in sequential write, delivering the speeds of 2,500MB/s and 1,500MB/s respectively.
This reflects the maximum performance of 950 PRO 512GB compared to 850 PRO 512GB. Results may vary based on the user environment
Level up to unmatched performance, power efficiency and endurance
This cutting-edge V-NAND-based NVMe SSD supports PCI Express** Gen 3 x4 lanes, providing a higher bandwidth and lower latency to process significantly more data than SATA SSDs*. Presented in a compact M.2 form factor, the next-generation 950 PRO is ideal for professionals using high-end PCs and workstations.
This reflects the maximum performance of 950 PRO compared to 850 EVO M.2
PCI Express and PCIe are registered trademarks of PCI-SIG
Features and specifications are subject to change without prior notification
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Product Type
M.2
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Interface
PCIe 3.0 x4 (up to 32Gb/s) NVMe 1.1
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Capacity
512 GB (1GB=1 Billionbyte by IDEMA) *
*Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise)
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Sequential Read Speed
Up to 2,500 MB/sec Sequential Read *
*Performance may vary based on system hardware & configuration
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Sequential Write Speed
Up to 1,500 MB/sec Sequential Write *
*Performance may vary based on system hardware & configuration
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Memory Speed
Samsung V-NAND
Samsung 512 MB Low Power DDR3
Full Specifications
Storage
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Capacity
512 GB (1GB=1 Billionbyte by IDEMA) *
*Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise)
Key Features
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Sequential Read Speed
Up to 2,500 MB/sec Sequential Read *
*Performance may vary based on system hardware & configuration
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Sequential Write Speed
Up to 1,500 MB/sec Sequential Write *
*Performance may vary based on system hardware & configuration
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Random Read Speed
Random Read (4KB, QD32):Up to 300,000 IOPS (Thread 4)
Random Read (4KB, QD1):Up to 12,000 IOPS (Thread 1)
* Performance may vary based on system hardware & configuration
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Random Write Speed
Random Write (4KB, QD32):Up to 110,000 IOPS (Thread 4) *
Random Write (4KB, QD1):Up to 43,000 IOPS (Thread 1)
* Performance may vary based on system hardware & configuration
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Memory Speed
Samsung V-NAND
Samsung 512 MB Low Power DDR3
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Controller
Samsung UBX Controller
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Trim Support
Yes
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AES Encryption
AES 256-bit for User Data EncryptionTCG Opal Family Spec and eDrive(IEEE1667) to be supported by FW update
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S.M.A.R.T. Support
Yes
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GC (Garbage Collection)
Auto Garbage Collection Algorithm
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Device Sleep Mode Support
Yes
General
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Power Consumption (W)
*Average: 5.7 Watts, Idle : 70mW
* Actual power consumption may vary depending on system hardware & configuration
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Reliability (MTBF)
1.5 Million Hours Reliability (MTBF)
Dimensions (W x D x H)
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Product
3.16" x 0.09" x 0.87"
