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All stock codes associated to this product
HX316LS9IB/8, 740617233346
HX316LS9IB/8
8GB 1G x 64-Bit DDR3L-1600
CL9 204-Pin SODIMM
DESCRIPTION
HyperX HX316LS9IB/8 is a 1G x 64-bit (8GB) DDR3L-1600 CL9 SDRAM (Synchronous DRAM) 2Rx8, low voltage, memory module, based on sixteen 512M x 8-bit DDR3 FBGA compo-nents. This module has been tested to run at DDR3L-1600 at a low latency timing of 9-9-9 at 1.35V or 1.5V. Additional timing parameters are shown in the PnP Timing Parameters section below. The JEDEC standard electrical and mechanical specifi-cations are as follows
PnP JEDEC TIMING PARAMETERS:
DDR3-1600 CL9-9-9 @1.35V or 1.5V
DDR3-1333 CL8-8-8 @1.35V or 1.5V
DDR3-1066 CL6-6-6 @1.35V or 1.5V
FEATURES
JEDEC standard 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V) Power Supply
VDDQ = 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V)
800MHz fCK for 1600Mb/sec/pin
8 independent internal bank
Programmable CAS Latency: 11, 10, 9, 8, 7, 6
Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
8-bit pre-fetch
Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS]
Bi-directional Differential Data Strobe
Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)
On Die Termination using ODT pin
Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°C
Asynchronous Reset
PCB : Height 1.180” (30.00mm), double sided component
SPECIFICATIONS
CL(IDD) 9 cycles
Row Cycle Time (tRCmin) 48.125ns (min.)
Refresh to Active/Refresh 260ns (min.)
Command Time (tRFCmin)
Row Active Time (tRASmin) 33.75ns (min.)
Maximum Operating Power TBD W* @1.35V
UL Rating 94 V - 0
Operating Temperature 0oC to 85oC
Storage Temperature -55oC to +100oC
Power will vary depending on the SDRAM used
