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All stock codes associated to this product
HX318LS11IB/4, 740617242089
HX318LS11IB/4
4GB 512M x 64-Bit DDR3L-1866
CL11 204-Pin SODIMM
DESCRIPTION
HyperX HX318LS11IB/4 is a 512M x 64-bit (4GB) DDR3L-1866 CL11 SDRAM (Synchronous DRAM) 1Rx8, low voltage, memory modules, based on eight 512M x 8-bit DDR3 FBGA compo-nents. This module has been tested to run at DDR3L-1866 at a low latency timing of 11-11-11 at 1.35V or 1.5V. Additional timing parameters are shown in the PnP Timing Parameters section below. The JEDEC standard electrical and mechanical specifications are as follows:
PnP JEDEC TIMING PARAMETERS:
DDR3-1866 CL11-11-11 @1.35V or 1.5V
DDR3-1600 CL10-10-10 @1.35V or 1.5V
DDR3-1333 CL8-8-8 @1.35V or 1.5V
FEATURES
JEDEC standard 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V) Power Supply
VDDQ = 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V)
933MHz fCK for 1866Mb/sec/pin
8 independent internal bank
Programmable CAS Latency: 13, 11, 10, 9, 8, 7, 6, 5
Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
8-bit pre-fetch
Burst Length: 8 (Interleave without any limit, sequential with starting address 000 only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS]
Bi-directional Differential Data Strobe
Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm 1%)
On Die Termination using ODT pin
Average Refresh Period 7.8us at lower than TCASE 85C, 3.9us at 85C < TCASE < 95C
Asynchronous Reset
PCB : Height 1.180 (30.00mm), double sided component
SPECIFICATIONS
CL(IDD): 11 Cycles
Row Cycle Time (tRCmin): 44.7ns (min.)
Refresh to Active/Refresh: Command Time (tRFCmin): 260ns (min.)
Row Active Time (tRASmin): 34ns (min.)
Maximum Operating Power: TBD W* @1.35V
UL Rating: 94V - 0
Operating Temperature: 0oC to 85oC
Storage Temperature: -55oC to +100oC
Power will vary depending on the SDRAM used.
