All stock codes associated to this product
HX426C15FB/4
HX426C15FB/4 4GB 512M x 64-Bit
DDR4-2666 CL15 288-Pin DIMM
DESCRIPTION
HyperX HX426C15FB/4 is a 512M x 64-bit (4GB) DDR4-2666 CL15 SDRAM (Synchronous DRAM) 1Rx8, memory module, based on eight 512M x 8-bit FBGA components per module. Each module kit supports Intel® Extreme Memory Profiles (Intel® XMP) 2.0. Each module has been tested to run at DDR4-2666 at a low latency timing of 15-17-17 at 1.2V. Additional timing parameters are shown in the Plug-N-Play (PnP) Timing Parameters section below. The JEDEC standard electrical and mechanical specifications are as follows:
JEDEC/XMP TIMING PARAMETERS
JEDEC/PnP: DDR4-2666 CL15-17-17 @1.2V, DDR4-2400 CL14-16-16 @1.2V, DDR4-2133 CL12-14-14 @1.2V, XMP Profile #1: DDR4-2666 CL15-17-17 @1.2V
FEATURES
Power Supply: VDD = 1.2V Typical
VDDQ = 1.2V Typical
VPP - 2.5V Typical
VDDSPD = 2.2V to 3.6V
Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
Low-power auto self refresh (LPASR)
Data bus inversion (DBI) for data bus
On-die VREFDQ generation and calibration
Single-rank
On-board I2 serial presence-detect (SPD) EEPROM
16 internal banks; 4 groups of 4 banks each
Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS)
Selectable BC4 or BL8 on-the-fly (OTF)
Fly-by topology
Terminated control command and address bus
Height 1.340” (34.04mm), w/heatsink
SPECIFICATIONS
CL(IDD): 15 cycles
Row Cycle Time (tRCmin): 45ns (min.)
Refresh to Active/Refresh, Command Time (tRFCmin): 260ns (min.)
Row Active Time (tRASmin): 26.25ns(min.)
Maximum Operating Power: TBD W*
UL Rating: 94V - 0
Operating Temperature: 0C to +85C
Storage Temperature: -55C to +100C