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KVR16LSE11/4HB
KVR16LSE11/4HB 4GB 1Rx8 512M x 72-Bit PC3L-12800
CL11 204-Pin ECC SODIMM
DESCRIPTIONThis document describes ValueRAM's 512M x 72-bit (4GB) DDR3L-1600 CL11 SDRAM (Synchronous DRAM), 1Rx8, ECC, low voltage, memory module, based on nine 512M x 8-bit FBGA components. The SPD is programmed to JEDEC standard latency DDR3-1600 timing of 11-11-11 at 1.35V and backwards compatible at 1.5V. This 204-pin SODIMM uses gold contact fingers. The electrical and mechanical specifications are as follows:
FeaturesJEDEC standard 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~1.575V) Power Supply
VDDQ = 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V)
800MHz fCK for 1600Mb/sec/pin
8 independent internal bank
Programmable CAS Latency: 5, 6, 7, 8, 9, 10, 11
Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
8-bit pre-fetch
Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS]
Bi-directional Differential Data Strobe
With Integrated onboard Temperature Sensor EEPROM
Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)
On Die Termination using ODT pin
Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°C
Asynchronous Reset
PCB: Height 1.18” (30mm), double sided component
Specifications
CL(IDD): 11 Cycles
Row Cycle Time (tRCmin): 48.125ns (min.)
Refresh to Active/Refresh Command Time (tRFCmin): 260ns (min.)
Row Active Time (tRASmin): 35ns (min.)
Maximum Operating Power: (1.35V) = 1.46W*
UL Rating: 94V - 0
Operating Temperature: 0C to +85C
Storage Temperature: -55C to +100C