All stock codes associated to this product
KVR26S19S8/8, MEKVR26S19S88, MEKVR26S19S8-8, 4196759, II33866, 740617280630
Kingston KVR26S19S8/8 8GB CL19 260-Pin
SODIMM
Features
- Power Supply: VDD = 1.2V Typical
- VDDQ = 1.2V Typical
- VPP = 2.5V Typical
- VDDSPD = 2.2V to 3.6V
- Nominal and dynamic on-die termination (ODT) for data, strobe, and mask
signals
- Low-power auto self refresh (LPASR)
- Data bus inversion (DBI) for data bus
- On-die VREFDQ generation and calibration
- Single-rank
- On-board I2 serial presence-detect (S
- PD) EEPROM
- 16 internal banks; 4 groups of 4 banks each
- Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode
register set (MRS)
- Selectable BC4 or BL8 on-the-fly (OTF)
- Fly-by topology
- Terminated control command and address bus
- PCB: Height 1.18” (30.00mm)
- RoHS Compliant and Halogen-Free
Overview
This document describes ValueRAM's KVR26S19S8/8 is a 1G x 64-bit (8GB)
DDR4-2666 CL19 SDRAM (Synchronous DRAM), 1Rx8, non-ECC, memory module, based on
eight 1G x 8-bit FBGA components. The SPD is programmed to JEDEC standard
latency DDR4-2666 timing of 19-19-19 at 1.2V. This 260-pin DIMM uses gold
contact fingers. The electrical and mechanical specifications are as follows:
Specifications
CL(IDD) |
19
cycles |
Row
Cycle Time (tRCmin) |
45.75ns(min.) |
Refresh
to Active/Refresh Command Time (tRFCmin) |
350ns(min.) |
Row
Active Time (tRASmin) |
32ns(min |
Maximum
Operating Power |
TBD
W* |
UL
Rating |
94
V - 0 |
Operating
Temperature |
0o
C to +85o C |
Storage
Temperature |
55o
C to +100o C |