All stock codes associated to this product
HX318LC11FBK2/16, 740617246506
HX318LC11FBK2/1616GB (8GB 1G x 64-Bit x 2 pcs.)DDR3L-1866 CL11 240-Pin DIMM Kit
DESCRIPTIONHyperX HX318LC11FBK2/16 is a kit of two 1G x 64-bit (8GB) DDR3L-1866 CL11 SDRAM (Synchronous DRAM) 2Rx8, low voltage, memory modules, based on sixteen 512M x 8-bit DDR3 FBGA components. Total kit capacity is 16GB. Each module kit supports Intel® Extreme Memory Profiles (Intel® XMP) 2.0. This module has been tested to run at DDR3L-1866 at a low latency timing of 11-11-11 at 1.35V. Additional timing parame-ters are shown in the PnP Timing Parameters section below. The JEDEC standard electrical and mechanical specifications areas follows:
PnP JEDEC TIMING PARAMETERS
JEDEC/PnP: DDR3L-1866 CL11-11-11 @1.35V/1.5V DDR3L-1600 CL10-10-10 @1.35V/1.5V DDR3L-1333 CL8-8-8 @1.35V/1.5V
XMP Profile #1: DDR3L-1866 CL11-11-11 @1.35V
FEATURES
JEDEC standard 1.35V and 1.5V Power Supply
VDDQ = 1.35V and 1.5V
933MHz fCK for 1866Mb/sec/pin
8 independent internal bank
Programmable CAS Latency: 13, 11, 10, 9, 8, 7, 6
Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
8-bit pre-fetch
Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS]
B-directional Differential Data Strobe
Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)
On Die Termination using ODT pin Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE = 95°C
Asynchronous Reset
Height 1.291” (32.80mm) w/heatsink, single sided component
Specifications
CLL(IDD): 10 Cycles
Row Cycle Time 44.75ns (min.)
Refresh to Active/Refresh/Command Time (tRFCmin): 260ns (min.)
Row Active Time: 32.125ns (min.)
Maximum Operating Power: TBD W*
UL Rating: 94V - 0
Operating Temperature: 0C to 85C
Storage Temperature: -55 C to +100 C
