All stock codes associated to this product
HX318LC11FBK2/8, 740617246490
HX318LC11FBK2/8
8GB (4GB 512M x 64-Bit x 2 pcs.)
DDR3L-1866 CL11 240-Pin DIMM Kit
DESCRIPTION
HyperX HX318LC11FBK2/8 is a kit of two 512M x 64-bit (4GB) DDR3L-1866 CL11 SDRAM (Synchronous DRAM) 1Rx8, low voltage, memory modules, based on eight 512M x 8-bit DDR3 FBGA components. Total kit capacity is 8GB. Each module kit supports Intel® Extreme Memory Profiles (Intel® XMP) 2.0. This module has been tested to run at DDR3L-1866 at a low latency timing of 11-11-11 at 1.35V. Additional timing parame-ters are shown in the PnP Timing Parameters section below. The JEDEC standard electrical and mechanical specifications areas follows:
Features
JEDEC standard 1.35V and 1.5V Power Supply
VDDQ = 1.35V and 1.5V
933MHz fCK for 1866Mb/sec/pin
8 independent internal bank
Programmable CAS Latency: 13, 11, 10, 9, 8, 7, 6
Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
8-bit pre-fetch
Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS]
Bi-directional Differential Data Strobe
Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)
On Die Termination using ODT pin
Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE = 95°C
Asynchronous Reset
Height 1.291” (32.80mm) w/heatsink, single sided component
SPECIFICATIONS
CL(IDD): 10 Cycles
Row Cycle Time (tRCmin): 44.75ns(min.)
Refresh to Active/Refresh, Command Time (tRFCmin): 260ns (min.)
Row Active Time (tRASmin): 32.125ns (min.)
UL rating: 94V - 0
Operating Temperature: 0C to 85C
Storage Temperature: -55C to +100c
