All stock codes associated to this product
HX321C11T3K2/8, 2714950, 740617235029
DDR3-2133 CL11 240-Pin DIMM Kit
DESCRIPTIONHyperX HX321C11T3K2/8 is a kit of two 512M x 64-bit (4GB) DDR3-2133 CL11 SDRAM (Synchronous DRAM), 1Rx8 memory modules, based on eight 512M x 8-bit FBGA components per module. Each module kit supports Intel® XMP (Extreme Memory Profiles). Total kit capacity is 8GB. Each module kit has been tested to run at DDR3-2133 at a low latency timing of 11-12-12 at 1.6V. The SPDs are programmed to JEDEC standard latency DDR3-1600 timing of 11-11-11 at 1.5V. Each 240-pin DIMM uses gold contact fingers. The JEDEC standard electrical and mechanical specifications are as follows:
XMP TIMING PARAMETERSJEDEC: DDR3-1600 CL11-11-11 @1.5V
XMP Profile #1: DDR3-2133 CL11-12-12 @1.6V
XMP Profile #2: DDR3-1600 CL9-9-9 @1.5V
FEATURES
JEDEC standard 1.5V (1.425V ~ 1.575V) Power Supply
VDDQ = 1.5V (1.425V ~ 1.575V)
800MHz fCK for 1600Mb/sec/pin
8 independent internal bank
Programmable CAS Latency: 11, 10, 9, 8, 7, 6
Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
8-bit pre-fetch
Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS]
Bi-directional Differential Data Strobe
Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)
On Die Termination using ODT pin
Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°C
Asynchronous Reset
Height 1.827” (46.41mm) w/ heatsink, single sided component
SPECIFICATIONS
CL (IDD): 11 Cycles
Row cycle time (tRCmin): 48.125ns (min.)
Refresh to Active/Refresh, Command time (tRFCmin): 260ns (min.)
Row Active Time (tRASmin): 35ns (min.)
Maximum Operating Power: TBD W* (Per module)
UL Rating (94 V to 85 C)
Storage Temperature: -55 C to +100C
